Impurity-based waveguide detectors

ABSTRACT

An optical circuit including a semiconductor substrate; an optical waveguide formed in or on the substrate; and an optical detector formed in or on the semiconductor substrate, wherein the optical detector is aligned with the optical waveguide so as to receive an optical signal from the optical waveguide during operation, and wherein the optical detector has: a first electrode; a second electrode; and an intermediate layer between the first and second electrodes, the intermediate layer being made of a semiconductor material characterized by a conduction band, a valence band, and deep level energy states introduced between the conduction and valence bands.

This application claims the benefit of U.S. Provisional Application No.60/474,155, filed May 29, 2003, which is incorporated herein byreference.

TECHNICAL FIELD

The invention generally relates to optical detectors and methods offabricating such detectors.

BACKGROUND

To build an optical signal distribution network within a semiconductorsubstrate, one needs to make good optical waveguides to distribute theoptical signals, and one needs to fabricate elements that convert theoptical signals to electrical signals in order to interface with othercircuitry. Extracting the optical signals can be accomplished in twoways. Either the optical signal itself is extracted out of the waveguideand delivered to other circuitry that can convert it to the requiredform. Or the optical signal is converted into electrical form in thewaveguide and the electrical signal is delivered to the other circuitry.Extracting the optical signal as an optical signal involves the use ofmirrors, gratings or couplers within the waveguides, or other elementsthat function like these devices. The scientific literature has anincreasing number of examples of technologies that can be used toconstruct such devices. Extracting the optical signal as an electricalsignal involves the use of detectors within the waveguide, i.e., circuitelements that convert the optical signal to an electrical form. Thescientific literature also has an increasing number of examples ofdetector designs that can be used to accomplish this.

The challenge in finding the combination of elements that produces anacceptable optical distribution network becomes greater, however, whenone limits the frame of reference to particular optical signaldistribution network designs and takes into account the practicalreality that any such designs should be relatively easy to fabricate andfinancially economical.

The combination of silicon and SiGe alloys (e.g. Si_(x)Ge_(1-x)) hasattracted attention as useful combination of materials from which onemight be able to easily and economically fabricate optical signaldistribution networks. With SiGe alloys it is possible to fabricatewaveguides in the silicon substrates. The index of refraction of a SiGealloy is slightly higher than that of silicon. For example, a SiGe alloywith 5% Ge (i.e., Si_(0.95)Ge_(0.05)) has an index of refraction ofabout 3.52 while crystalline silicon has an index of refraction that isless than that, e.g. about 3.50. So, if a SiGe alloy core is formed in asilicon substrate, the difference in the indices of refraction issufficient to enable the SiGe alloy core to contain an optical signalthrough internal reflections. Moreover, this particular combination ofmaterials lends itself to the use of conventional silicon basedsemiconductor fabrication technologies to fabricate the opticalcircuitry.

Of course, for such a system to work as an optical signal distributionnetwork, the optical signal must have a wavelength to which both the Siand the SiGe alloy are transparent. Since the bandgap energy of thesematerials is approximately 1.1 eV, they appear transparent to opticalwavelengths having a wavelength greater than 1150 nm. A furtherreduction in bandgap energy caused by use of a SiGe alloy rather thanpure Silicon, and higher temperature operation as high as 125° C. mayfurther require the wavelength be longer than 1200 nm or even 1250 nmfor very low absorption loss (approximately 1 db/cm or less). But, thetransparency of these materials to optical signals having thosewavelengths brings with it another problem. These materials aregenerally not suitable for building detectors that can convert theoptical signals to electrical form. To be a good detector, the materialsmust be able to absorb the light in a manner so as to create usefulcharge that can be detected electrically. That is, the optical signalmust be capable of generating electron transitions from the valence bandto the conduction band within the detector to produce an electricaloutput signal. But the wavelengths greater than 1150 nm are too long toproduce useful absorption by electron transitions in silicon, or inSi_(0.95)Ge_(0.05) alloys at room temperature. At a wavelength of 1300nm, the corresponding photon energy is about 0.95 eV, well below theroom temperature bandgap of silicon and Si_(0.95)Ge_(0.05) andconsequently well below the amount necessary to cause transitions fromthe valence band into the conductor band.

SUMMARY

In general, in one aspect, the invention features an optical circuitincluding: a semiconductor substrate; an optical waveguide formed in oron the substrate; and an optical detector formed in or on thesemiconductor substrate, wherein the optical detector is aligned withthe optical waveguide so as to receive an optical signal from theoptical waveguide during operation. The optical detector has: a firstelectrode; a second electrode; and an intermediate layer between thefirst and second electrodes. The intermediate layer includes asemiconductor material characterized by a conduction band, a valenceband that is at a lower energy level than the conduction band, and deeplevel energy states introduced between the conduction and valence bands.

Other embodiments include one or more of the following features. Theoptical detector is formed in the waveguide and the waveguide is formedin a trench in the substrate. The substrate is made of silicon. Theoptical waveguide includes a core made of a SiGe alloy. The firstelectrode is made of a first doped semiconductor material and the secondelectrode is made of a second doped semiconductor material and the firstand second doped semiconductor materials are of the same conductivitytype. The first semiconductor material is a first doped silicon and thesecond semiconductor material is a second doped silicon. The first andsecond doped silicons of opposite conductivity types or alternatively,they are of the same conductivity type. The first and second dopedsemiconductor materials are either both N-type or both P-type. Thedoping of the first and second semiconductor materials increases as afunction of distance from the intermediate layer The semiconductormaterial is a SiGe alloy, e.g. Si_(0.95)Ge_(0.05). The semiconductormaterial is doped with at least one of indium and thallium to producethe deep level energy states. The semiconductor material also includes aco-dopant that functions to either substantially fill or substantiallydeplete said deep level energy states or improve optical activation ofthe deep level energy states. The co-dopant is carbon or it is selectedfrom the group consisting of arsenic, phosphorous, and carbon.

In general, in another aspect, the invention features an opticaldetector including: a first electrode; a second electrode; and anintermediate layer between the first and second electrodes, wherein theintermediate layer is made of a semiconductor material characterized bya conduction band, a valence band that is at a lower energy level thanthe conduction band, and deep level energy states introduced between theconduction and energy bands, and it also includes a co-dopant thatfunctions to either substantially fill or substantially deplete saiddeep level energy states or improve optical activation of the deep levelenergy states.

In general, in yet another aspect, the invention features a method offabricating an optical circuit. The method involves: fabricating awaveguide on or in a substrate; and over a selected portion of thewaveguide, fabricating an optical detector, wherein fabricating thewaveguide involves: depositing a first cladding material; depositing acore material on the first cladding material, wherein the core materialis a semiconductor material characterized by a conduction band and avalence band that is at a lower energy level than the conduction band;and depositing a second cladding material on the core material.Fabricating the optical detector involves: producing a first conductingelectrode from the first cladding material; producing an intermediatelayer from the core material, wherein producing the intermediate layerinvolves introducing deep level energy states between the conduction andvalence bands of the semiconductor material; and producing a secondconducting electrode from the second cladding on the intermediate layer.

In other embodiments, producing the intermediate layer also involvesintroducing a co-dopant into the first-mentioned semiconductor materialthat functions to either substantially fill or substantially depletesaid deep level energy states or improve optical activation of the deeplevel energy states.

In general, in still yet another aspect, the invention features a methodof fabricating an optical detector. The method involves: producing afirst conducting electrode; producing an intermediate layer on top ofthe first conducting electrode, wherein the intermediate layer is madeof a semiconductor material characterized by a conduction band and avalence band that is at a lower energy level than the conduction band;and producing a second electrode on the intermediate layer. Producingthe intermediate layer also involves introducing deep level energystates into the semiconductor material between the conduction andvalence bands and introducing a co-dopant into the semiconductormaterial that functions to either substantially fill or substantiallydeplete said deep level energy states or improve optical activation ofthe deep level energy states.

One important advantage of at least some embodiments of the invention isthat they are particularly thermally robust. That is the detectors areable to survive the subsequent thermal cycling of the wafers duringlater transistor fabrication. Thus, they can be used in optical readysubstrates or semiconductor wafers which are expected to undergo furtherprocessing to fabricate microelectronics components.

Some of the embodiments of the invention are particularly well suitedfor use in the optical ready substrates described below. Otherembodiments have more general applications in areas such astelecommunications.

Other features and advantages of the invention will be apparent from thefollowing detailed description and from the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows the band structure of silicon doped with deep levelacceptors.

FIGS. 2A–G illustrate a method for fabricating impurity-based detectors.

FIG. 3 depicts in schematic form an impurity-based SiGe alloy detector.

FIGS. 4A–J illustrate a method for fabricating a semiconductor circuiton an optical ready substrate.

DETAILED DESCRIPTION

An Impurity-Based Detector

One embodiment of the invention is an impurity-based detector that ismade of silicon and a SiGe alloy and that satisfactorily detects opticalsignals with wavelengths that are longer than the wavelengthcorresponding to the absorption edge of silicon or SiGe alloy includingoptical signals with a wavelength longer than 1150 nm. The detectors aremade within a waveguide typically having a SiGe alloy of about 5% Geforming the waveguide core by doping that core with a material thatgenerates deep energy levels within the bandgap energy region of theSiGe alloy. That is, the dopant is characterized by producing energystates that are sufficiently far from either conduction or valance bandso that an optical signal with a wavelength greater than 1150 nm willcause transitions of electrons between this dopant-induced state and oneof the bands, creating free charge for an electrical current, therebydetecting the optical signal.

Within the periodic table there are a number of elements that producedeep energy levels in semiconductors. Two elements, in particular, sharea number of characteristics that are important for constructingdetectors that can be incorporated into conventional fabricationprocesses that one might typically find in the silicon semiconductorfabrication industry. They are thallium and indium. Referring to FIG. 1,they produce deep acceptor states 2, which means their energy states arecloser to the valance band 4 than the conduction band 6, but far enoughabove the valence band to allow wavelengths longer than 1200 nm to beproductively absorbed. Indium produces acceptor states at about 160 meVabove the valence band and thallium produces acceptor states that areabout 260 meV above the valence band. Both of those elements also havediffusion rates that are slow enough that they will stay substantiallyin place under normal fabrication and operational temperatures that thedetectors might experience if used in an optical ready substrate inwhich other microelectronic devices are later fabricated. That is, theywill not diffuse out of the detector during subsequent thermal cycles towhich the wafer will be exposed.

It should also be noted that the impurity states could through a morecomplex interaction with the band edge produce a broad or smoothdistribution of deep energy levels when incorporated into Si or a SiGealloy. Thus a broad impurity absorption spectrum can occur near the bandedge, appearing as an extension or tailing of the band absorption. Thisbroad spectrum is generally useful in aiding the tolerance of thedetector to known temperature shifts in the band gap that wouldotherwise move the absorption energy off resonance from the lightquantum energy and negatively affect absorption with temperaturechanges.

The transition that is of interest in the described embodiment of theSiGe alloy impurity-based detector could be from valance band toconduction band via energy state bands that extend or tail into theenergy gap because of the impurity effects, or from more band-isolateddeep acceptor states to the conduction band. It is these transitionsthat will produce the electrical detection signal. When a SiGe alloy isdoped with either indium or thallium, many of the valence states areionized to produce the holes that characterize p-type semiconductormaterials. To increase the population of electrons in the deep acceptorstates, i.e., to fill the available acceptor sites, the SiGe alloy isalso doped with a donor material, e.g. As or P. The electrons from thedonor dopant fill the acceptors sites and thereby increase the number ofacceptor sites that are available to support a transition of an electronup into the conduction band. This filling of the acceptor sites couldalso occur from transfer of electrons from donors in an adjacent N-typeregion within a PN diode structure to be discussed later.

The use of such co-dopants also yields another benefit inphotoconductive detector mode to be discussed later. Filling up theholes generated by the deep level acceptor dopant, decreases the numberof free electrons and/or holes that facilitate conduction through thematerial and thereby increase its resistance. In photoconductivedetectors, the impurity-based SiGe alloy is used as the material for theintrinsic or low charge region between the two of same type (N or P)electrodes. The lower the resistance of this region, the higher the darkcurrent that is produced by the device in the absence of an opticalsignal. It is desirable to keep the dark current as low as possible.Introducing an opposite type co-dopant along with the deep level statehelps accomplish this objective. If the co-dopant is increased beyondthat needed to make the material intrinsic, or charge balanced, then thematerial can have the charge of the opposite sign in the other band.This leads to a photo-transistor effect that can provide more gain atthe expense of bandwidth or speed. This device will be discussed in moredetail later.

The increase in the population of both holes and electrons by usingco-dopants also yields yet another benefit. It helps reduce therecombination time of free charges, which is the time needed for adetector to recover after sensing an optical signal, especially inphotoconductive type detectors. Stated differently, it increases therecombination rate of electrons and holes, thereby increasing the speedof the device due to there being more electrons and holes together.

Both indium and thallium are characterized by a low solid solubility inSi or SiGe alloys. That means there is an upper limit to how much eachof these materials can be added to the silicon lattice before thelattice will no longer accept more of it. The optimum doping levelsappear to be in the range of about 10¹⁶ cm⁻³ to 10¹⁸ cm⁻³. In the caseof thallium the highest doping levels are typically around 2×10¹⁷ cm⁻³.To increase this effective density and thereby increase the efficiencyof the detectors that are fabricated from these materials one can add aco-dopant that increases the solid solubility of the material in thesilicon lattice. In essence, the co-dopant keeps the deep level dopantin the lattice sites and discourages it from coming out of the lattice.In the case of indium, an example of a co-dopant that accomplishes thatfunction is carbon. Other co-dopants that may help activation of indiumand thallium include arsenic, phosphorous and other N-type donors inhigher concentrations than needed just to fill acceptor sites.

In other words, there are at least four reasons for using one or moreappropriate co-dopants along with the thallium or indium. First, theycan be used to charge the acceptor impurity to fill the empty holesthereby increasing the number of electrons available to absorb theoptical signal (i.e., increasing the sensitivity of the detector).Second, they can be used to produce a higher dark resistance by reducingthe number of free charges. Third, they can be used to help reduce therecombination time (i.e., increases the recombination rate) of freecharges. And fourth, they can be used to help increase the probabilitythat the deep level acceptor element will occupy a lattice site insteadof an interstitial site so as to be optically active. That is, they canproduce better activation on the silicon lattice.

In addition, co-dopants can also serve still other useful functions inthis context. For example, they can be used to reduce the diffusioncoefficient of another co-dopant or they can be used to enhance thethermal stability of the deep level acceptor dopant making it lesslikely that it will become deactivated in the host lattice by thermalcycling or high temperature operation.

There are a number of co-dopants that serve one or more of the functionsjust described. For example, in the case of indium, carbon, a Group IVelement, works to increase the solid solubility of the indium in thesilicon lattice. A number of Group V elements, including the widely usedelements of arsenic and phosphorous, serve multiple functions. Forexample, arsenic is a dopant that produces energy states that are about14 meV from the conduction band. When used with indium or thallium, itsignificantly enhances the performance of the indium or the thallium byfilling the holes with electrons thereby increasing the population ofelectrons that can undergo a transition into the conduction band. Thearsenic also appears to help by enabling more indium or thallium to gointo the lattice. And, in the case of indium, it appears to form morecomplex microstructures with the indium that produces a broader spectrumresponse for the device.

It is also reported that the Group V element antimony (Sb) is aneffective co-dopant for increasing the solid solubility of Tl, and thatthe Group V element bismuth (Bi) is an effective co-dopant forincreasing the solid solubility of In (see e.g. Ion Implantation inSemiconductors, Mayer, Eriksson, and Davies, 1970).

A Method of Fabricating the Detector

An illustrative method for fabricating an impurity-based detector isdepicted in the flow sequence of illustrations of FIG. 2A. In thisexample, the detector is fabricated in a silicon substrate 300, thoughit could be fabricated in any appropriately selected substrate in whichwaveguides can be fabricated such as for example an SOI substrate, aninsulating material, or a low index material, just to name a few. Theprocess begins with forming, e.g, by etching, a trench 302 that willdefine the outer perimeter of the detector (FIG. 2A). The etching oftrench 302 is done using any one of a number of etching technologiesthat are widely used in the semiconductor fabrication industry, e.g. aplasma etch.

After trench 302 is made, a lower electrode layer 304 is deposited overthe surface of substrate 300 and into trench 302 (FIG. 2B). This lowerelectrode is to be highly conducting for low electrical resistance.Electrode layer 304 can be made conducting, for example, using electronsfrom highly doped n-type silicon in which the dopant is phosphorous,arsenic, antimony, or bismuth. Alternatively, the electrode could bemade conducting using holes with highly doped p-type silicon in whichthe dopant is boron, aluminum, gallium or indium. The object of thisdeposition is to form a conducting electrode layer that conforms to thetrench but does not fill up the trench. Rather, it leaves a smallertrench of sufficiently large size to allow the several additional layersdescribed below to be deposited.

This layer should be doped at a sufficient level that the resistance ofthis electrode does not prevent current from the detector fromefficiently flowing into the external sensing circuit. This means theseries resistance of all the electrodes should be comparable or lessthan the resistance of the sensing circuit. On the other hand, too muchdoping can cause free electron scattering and absorption that reducesefficiency of the detector. Useful ranges of electrode doping are from10¹⁶ cm⁻³ to 10¹⁹ cm⁻³, with the optimum depending on designrequirements for loss and resistance. Furthermore, an improved designwould use electrode doping that is non-uniform, with low doping in thearea with high optical power, and high levels of electrode doping forlow resistance in areas of that see low or no optical power. Incontrast, the useful absorption caused by the impurity dopant is bestplaced in regions of high optical power. Increased thickness of thisdopant increases absorption as long as it is illuminated by the light tobe detected, but thicker regions of dopant could decrease the speed ofthe detector. For example, to construct a detector with response fasterthan 20 picoseconds, the dopant should be placed in a regionapproximately less than 300 nm thick

After lower electrode layer 304 is in deposited, a first intermediatelayer 306 of SiGe alloy is deposited on top of it (FIG. 2C). Firstintermediate layer 306 is the host material that will receive one ormore co-dopants in a subsequent step and it represents one half of themiddle portion of the detector structure. The index of refraction ofthis material needs to be higher than that of the silicon electrode sothat it functions as a waveguide structure that contains the light.Thus, the percentage of Ge needs to be appropriately chosen, e.g. atleast as large as about 2%.

A deep level energy state inducing dopant 308, such as indium orthallium, is then implanted into first intermediate layer 306 to asufficient depth that it will not evaporate out of the intermediatelayer during subsequent processing (FIG. 2D). One or more co-dopants arealso implanted into first intermediate layer 306. This can be donebefore, during, or after the implanting of the deep level acceptordopant. If the co-dopant material serves multiple functions, then it maybe acceptable to use only a single co-dopant. If the co-dopant materialserves only one function (e.g. increasing the solubility of the deeplevel acceptor in the silicon lattice), then it will be appropriate touse multiple co-dopant materials. In other words, the types and numberof co-dopants one selects during this phase depends on the results onewants to achieve.

After appropriate dopant materials 308 are co-implanted into firstintermediate layer 306, a second intermediate layer 310 of silicon orSiGe alloys is deposited onto first intermediate layer 306 (FIG. 2E).Again the amount of deposition is selected to not fill the trench thatremained after the last deposition. This is to leave room for the finaldeposition of the electrode.

Finally, an upper electrode layer 312 is deposited onto secondintermediate layer 310 Like lower electrode 304, upper electrode 312 canbe highly doped n-type silicon in which the dopant is phosphorous orarsenic, antimony, or bismuth. Alternatively, the electrode could bemade conducting using holes with highly doped p-type silicon in whichthe dopant is boron, aluminum, gallium or indium.

After upper electrode 312 has been deposited, the structure is thermallytreated (e.g. annealed) at a sufficiently high temperature and for asufficiently long time to cause the co-implants to diffuse out into thefirst and second intermediate layers 306 and 310. A conventional annealis typically performed at 1050° C. The anneal time and temperaturerequired is determined by the diffusion coefficient of the dopant andthe thickness of the first and second intermediate layers. This annealcan occur at any appropriate time after the upper electrode has beendeposited, and it need not necessarily immediately follow the formationof the upper electrode.

Finally, if the impurity based detector is part of a waveguide structurethat is also fabricated into the silicon substrate and/or it is to bepart of an optical ready substrate to which connections are made fromone side, then the structure is planarized (FIG. 2G). The planarizingprocess, which may be performed using chemical mechanical polishing(CMP), is meant to remove the deposited layers that are above thesurface of silicon substrate 300. This will expose contact points 314and 316 to lower and upper electrode layers 304 and 312, respectively.

As noted previously, the impurity-based detector can be formed withinand as part of the waveguide during the process of also fabricating thewaveguide. For example, if a silicon substrate is used, the trenchdefines the location in which the waveguide is to be formed. The SiGethat is deposited into this trench functions principally as a waveguideexcept in regions or locations along that trench at which the detectorsare formed. In that case, the dopants introduced in layer 308 areselectively implanted only in regions in which a detector is desired byuse of standard photolithographic patterning. This patterned selectionof regions of a waveguide is especially useful in optical circuits inwhich most of the waveguide is used for transmission of light, and theselected regions are of the waveguide are used for absorption of lightby selectively implanting layer 308 into those regions. The electrodedopants can also be implanted only in the detector regions so as toreduce non-productive optical losses from free electron scattering andabsorption in the transmission region of the waveguide.

The introduction of the absorbing impurity or the conducting electrodedopants could be performed by implanting at high energy after layergrowth as previously described, or alternatively by incorporation by useof additional gases or fluxes of these elements during the Si or SiGealloy epitaxial layer growth. In the latter case, the selective patternof the dopant could be performed by selective epitaxial growth. Thisrequires patterning of a masking material such as silicon oxide orsilicon nitride in areas where the silicon or doped silicon is notdesired to grow. Then, the substrate temperature and growth rate isadjusted so that epitaxial growth only occurs on the exposed SiGe alloysurfaces and not on the masking material.

The above-described waveguide illustrates an example of using a trenchto form the waveguide and the included impurity-based detectors. Onecould also use a ridge structure instead of a trench to fabricate thewaveguide and the detectors. For example, an analogous functioningwaveguide detector is realized by forming on the substrate a ridge ofsilicon that traces out the path of the optical waveguide. Then, thethree layers, which in the impurity-based detector represent the twoelectrodes and the intermediate impurity-doped region, are depositedover the substrate so that they cover and conform to the ridge ofsilicon. After etching away the appropriate material, the three layersform the optical waveguide and, in areas in which the doping is modifiedappropriately as discussed above, they form the impurity-based detectorswithin the waveguide. In yet another physical embodiment, the layers canbe grown on a planar surface and then the material on either side of astrip that is to be the waveguide is etched away. The material betweenthe two strips that have been etched away represents the waveguide andwherever it is desired to have detectors located, the doping of thelayers making up the waveguide can be modified accordingly duringfabrication to produce impurity-based detectors at those locations. Afill material can also be deposited to fill up the portions that wereetched away on either side of the waveguide to thereby define the sidewalls of the waveguide and the impurity-based detectors. The nature ofthe material that is used to fill those portions will depend on whetherthe material is designed to aid in confinement of the optical signal orin electrically connecting to the detectors. For example, if it is meantto aid in confinement of the optical signal in the lateral direction,the fill material should have on average a lower refractive index thanthe material making up the detector and waveguide.

Of course, if the detector is to be used as a standalone device or insome other environment, it might not be necessary to planarize thestructure to expose the contact point for the lower electrode, asdescribed above. Rather, one could make one contact to the top electrodefrom above and the other to the lower electrode from below through thebackside of the structure. Yet another alternative is to form aninsulated contact hole from the top to contact the bottom electrode.

In any case, in one embodiment, the final steps involve depositing aninsulating layer 318 over the structure, forming contact vias 320 and322 through insulating layer 318 and to the contact points 314 and 316on the lower and upper electrodes, respectively; depositing a metal,e.g. aluminum, within the vias to form ohmic contacts at the bottom ofthe vias; and then filling vias 320 and 322 with metal (e.g. tungstenplugs) that provides electrical connectivity to the ohmic contacts atthe bottom of the vias. Of course, there are likely to be many otherlayers deposited on top of the structure depending on the circuit inwhich this device is embedded. So, the process of forming the contactvias might occur much later in a more involved fabrication process. Inaddition, if the device is part of an optical ready wafer, the eventualconnection to the lower and upper electrodes might be performed byanother entity, such as the company that fabricates the semiconductormicroelectronic circuits above the optical layer.

Referring to FIG. 3, there are a number of considerations worth keepingin mind when fabricating the impurity-based detector just described. Forone thing, if the detector is coupled to a waveguide, the optical energyfrom the waveguide will need to propagate into the detecting region 400.It is thus important to carefully match the mode of the waveguide to themode of the detector so that this coupling of energy is optimized.

In the case of a SiGe alloy waveguide that is designed to carry 1300 nmoptical signals, we have found that a core that is about 1 μm deep and 3μm wide works well. For a waveguide of that design, a good geometry forthe detector is as shown in FIG. 2 with the dimensions as follows: thewidth “a” of the upper electrode equals about 1.0 μm; the depth of theupper electrode equals about 0.25 μm, the width “b” of the detectingregion equals about 0.75 μm; the depth “H” of the detecting regionequals about 1.0 μm; and the width “W” of the lower electrode equalsabout 1.0 μm. For high-speed performance it is preferred to keep theseries resistance of the detector as low as possible. For high speedoperation with probing through a 50 Ohm impedance transmission line, itis desirable to keep the resistance R of the upper extension of thelower electrode to the contact point on the surface to less than about10 Ω. For high-speed operation with a high resistance local sensor suchas a transistor, the useful resistance could be larger, as high as 1000to 3000 ohm over length of detector in micrometers. The limit of theresistance is the product of the device capacitance, about 2 femtoFaradsper micrometer for a PN diode in the geometry described above and theseries resistance, giving an electrical charging time response of 2 to 6picoseconds for the high resistance described above. A smaller seriesresistance is accomplished by making the width “W” larger and making theheight “H” shorter. Also, additional higher doping outside the regionseen by the light could lower the series resistance without increasingoptical absorption from the free carriers.

Another consideration is to keep the light of the optical signal awayfrom the electrons in the highly-doped electrode regions 304 and 312.This can be accomplished in both lower electrode 304 and upper electrode312 by grading the doping away from the light of the mode propagatingthrough the detector. One way to do this in lower electrode 304 is tochange the doping of the layer as it is being deposited. For example,the first half of the deposition puts down a layer of doped silicon inwhich N_(D)=10¹⁸ cm⁻³ and the second half of the deposition puts down alayer with N_(D)=10¹⁷ cm⁻³. Thus, the region of electrode 304 that isclosest to the light that is propagating through the center of thedetector (i.e., absorbing region 400 in FIG. 2) has lower doping levelsand is thus less likely to provide electrons that absorb light throughscattering. A similar approach can be used to deposit upper electrode312, putting the more highly doped part of upper electrode 312 near thesurface where the contact will be formed.

The doping profiles can be more complex than a simple binary function.They can, for example, be graded from one side of the electrode to theother in a more continuous manner. The profiles that are generated aresimply a matter of how the dopants are supplied to the system as thelayer is being deposited. The final doping profile will further dependon movement or diffusion of the dopants during any anneal cycles, whichmust be considered in any design optimization.

In general during this phase of the fabrication process (i.e., formingthe intermediate layer that is implanted with a deep level energystate), the goal is to choose the ion implanting energies, the doses,the times and the temperatures so that the detector region is heavilydoped with deep level energy states, especially within the light/solidinteraction region and preferably where the light intensity isstrongest. A typical energy for implanting the thallium or the indiuminto the first intermediate layer is between 100 kV and 200 kV, which isthe range of energies in which many commercially available implantationsystems operate. In general, the ion energy needs to be sufficient toachieve an adequate projected range into the host SiGe alloy (e.g. atleast about 0.1 μm) so the dopant remains in the host material duringsubsequent processing. Because economically useful implant energies mayonly allow shallow implants, smaller than the micrometer thickness ofthe SiGe alloy waveguide, it may be necessary to interrupt the growth ofthe waveguide so as to create the implant at a point where the lightintensity is highest within the guide.

As an alternative to implanting, the impurity could be incorporated aspart of the SiGe growth process by CVD or MBE, but only allowed toincorporate during the part of the growth where the impurity is desiredto be placed. This in-situ impurity growth technique is well known forcreating doping profiles of P and N regions in different layers usingvery similar species of boron, arsenic, and phosphorous.

In reality, the implant energies can be as low as a few hundred KeV oras high as a few MeV. If low implant energies are used, then other knowntechniques will likely have to be employed to prevent that shallowimplanted material from escaping during subsequent processing before itis able to diffuse into the host material. A commonly used well-knowntechnique to address this problem is to use a capping layer (e.g. SiO₂or Si₃N₄) to hold the implant in place until the diffusion into the hostmaterial has taken place.

The target doses for the indium or thallium during implantation aregenerally between about 10¹²-5×10¹⁵ cm⁻² and more particularly betweenabout 10¹³-10¹⁴ cm⁻² to the depth of about 0.1 μm. When this implanteddopant is later diffused down into the two intermediate layers, thatwill produce a doping level in the range of 10¹⁷-10¹⁸ cm⁻³, depending ofcourse on whether a co-dopant is also used to reach the higherconcentration. As noted above, more doping increases absorption and thusthe efficiency of the detector but it also increases the dark current inthe photoconductive detector. So the optimum level will depend on thedesign goals for the system in which the detector will be implementedand will be a trade-off between these two considerations.

Fabricating an Electronic Circuitry on an Optical Ready Substrate

As noted above, the impurity-based detector can be formed in an opticalready-substrate onto which semiconductor electronic circuitry will laterbe fabricated. The sequence of process steps for fabricating theelectronic circuit above the optical-ready substrate is generallyillustrated in FIGS. 4A–J.

After the structure shown in FIG. 1F is planarized using for exampleCMP, the resulting structure is as shown in FIG. 4A. It is assumed thatthe substrate also includes other optical components that are not shown,such as laser elements for generating the optical signals fromelectrical signals, optical waveguides for distributing the opticalsignals, and mirrors or other reflecting elements for directing opticalsignals up to circuitry that is fabricated above the waveguides or forreceiving optical signals from above and directing those signals intothe waveguides.

On top of the planarized surface that was formed above the opticalcircuitry, a layer of silicon 402 is deposited (see FIG. 4B). This maybe accomplished in a number of alternative ways including for example,through a chemical vapor deposition process. The resulting layerprovides a surface onto which a silicon wafer can then be bonded byusing well-known processes to form an SOI (silicon-on-insulator)structure. The SOI structure includes an insulating layer 404 (e.g.SiO₂) and above that a silicon layer 406, which provides a substrateinto which the electronic circuitry is to be fabricated (see FIG. 4C).

Next, a hard protective layer 408 (e.g. silicon nitride) is depositedover the surface and patterned to create isolation openings 410 thatform electrically-isolated islands of silicon 412 (see FIG. 4D). Afterusing an appropriate mask, deeper isolation openings 414 are then etchedthrough both insulating layer 404 and silicon layer 402 to expose theunderlying impurity-based detectors (see FIG. 4E).

To produce a smooth, flat surface for fabricating the electroniccircuitry into the islands of silicon an oxide layer 416 (e.g. SiO₂) isdeposited over the surface of the wafer. Then, CMP is used to planarizethat deposited oxide layer and remove protective layer 408 in theprocess, thereby exposing the upper surfaces of the silicon islands 412(see FIG. 4F).

The rest of the process generally involves standard semiconductorcircuit fabrication steps except when it comes to electricallyconnecting with the underlying impurity-based detectors. In other words,transistors 418 and other electrical components (not shown) are thenformed in the islands of silicon using known fabrication techniques,e.g. CMOS fabrication techniques (see FIG. 4G). After that, a thickoxide 420 is deposited over the entire wafer and planarized (see FIG.4H). Following that, contact openings 422 are etched in the oxide downto the components. The etch that is done during this phase is modifiedin comparison to conventional etch schedules so that in selected areasthe openings 424 reach deeper down to the detectors located at a levelbelow the electrical components (see FIG. 41). After the contact openingare formed, metal 426 is deposited and patterned to form the requiredinterconnects (see FIG. 4J). Though the metallization is illustrated asall residing in a single layer, for the more complex circuits for whichone would likely use the optical ready substrate, the metalizationsoccupy multiple layers each separated by insulating material, e.g. SiO₂.

Note that the above description of a process for fabricating theelectronic circuitry above the optical ready substrate omitted manyminor steps that are well known to persons of ordinary skill in the art.This discussion was meant to be merely a high level description of anexample of a sequence of fabrication steps that would produce thedesired structure. For a more detailed discussion of all of the processsteps that are involved the reader is referred to other publiclyavailable sources in the public literature.

Use of Impurity Absorption in a Detector Device

There are many ways to use absorption in a detector. Depending on thesemiconductor doping in the cladding electrode layers surrounding theimpurity region relative to the charge polarity of the impurity region,a detector device could be a photoconductive detector, a PIN diodedetector, or a phototransistor.

A Photoconductive Detector

If the cladding electrode layers of the impurity region have the samemajority carrier as the impurity region, then the detector isphotoconductive. For example, if thallium or indium is used as animpurity, they tend to create a P-type semiconductor with excess holes.If both top and bottom cladding electrode layers are also doped withP-type acceptors such as boron that create holes, then the device is aphotoconductor. A photoconductor has the property of changing electricalresistance when carriers are generated by light absorption. If more orless carriers are created by transitions to or from an impurity, thenthe resistance will change. For low dark current, the middle impurityregion can be co-doped to reduce net free charge. For instance, thethallium or indium doping could be co-doped with arsenic that createselectrons. If the arsenic co-doping is properly balanced so an electronis made to fill each hole, but not too much to have extra electrons,then the impurity region could be made to have low excess charge fromelectrons or holes. This would then increase the resistance and lowerthe current through the unlit, or dark, photoconductor.

A P-I-N Diode Detector

Fabricating a P-I-N diode detector can solve the problem of therelatively large dark currents that tend to characterize thephotoconductive detectors. The P-I-N structure is basically the same aswhat was described above except that the one electrode is highly dopedwith a P-type acceptor such as boron and the other buffer electrode isdoped with a donor such as arsenic or phosphorous. When this detector isrun in reverse electrical bias, low electrical current leaks through agood quality diode, yet efficient high speed detection of light canoccur.

A Phototransistor Detector

Yet another type of detector is a phototransistor. If the claddingelectrode layers of the impurity region have the opposite majoritycarrier as the impurity region doping, then the detector is aphototransistor. For example, if thallium or indium is used as animpurity, they tend to create a P-type semiconductor with excess holes.If both top and bottom cladding electrode layers are doped with theopposite N-type acceptors such as arsenic or phosphorous that createelectrons, then the device is a phototransistor. A phototransistor hasthe property of amplifying the charge current generated by lightabsorption. The amplification is the well-known transistor effect frombipolar NPN transistors, but in this case the transistor's base currentis provided by the impurity absorption rather than a third connectingwire.

Though we have described photoconductor, photodiode, and phototransistordetectors, it should be understood that these are simply specificexamples of what can be referred to more generally as photoconductivedetectors and photodiode detectors, respectively. In other words, theelectrodes are not restricted to being N-type or P-type, they could alsobe metal electrodes. In addition, the absorbing region (i.e., theI-region) may be an insulator, a weakly conductive region, or even ahighly conductive region.

The impurity-based SiGe alloy detectors described above are consideredto be particularly useful in the fabrication of the optical readysubstrates such as are described in detail in U.S. patent applicationSer. No. 10/280,505, filed Oct. 25, 2002, entitled “Optical ReadySubstrates,” and U.S. patent application Ser. No. 10/280,492, filed Oct.25, 2002, entitled “Optical Ready Wafers,” both of which areincorporated herein by reference. Some of the waveguides that arementioned in connection with the optical ready substrates are SiGe alloywaveguides. Methods of making such waveguides are described in publiclyavailable scientific literature including, for example, U.S. patentapplication Ser. No. 09/866,172, filed May 24, 2001, entitled “Methodfor Fabricating Waveguides,” and to U.S. patent application Ser. No.10/014,466, filed Dec. 11, 2001, entitled “Waveguides Such As SiGeCalloy Waveguides and Method of Fabricating Same,” both of which areincorporated herein by reference.

The impurity-based detector can be fabricated either after the SiGealloy waveguide has been fabricated or before. Also, it can be part ofthe optical waveguide or as a termination of an optical waveguide.

In addition, multiple different circuit components that employ opticalconversion, e.g. diodes, free space detectors, modulators, transistors,and more complex circuit elements, can benefit from the principlesdescribed herein. That is, the invention is not limited to just opticaldetectors fabricated in or next to optical waveguides.

OTHER EMBODIMENTS

The embodiments described above use SiGe alloys as the semiconductor.Other alternative semiconductors can be used including, but not limitedto, Si, Ge, and SiGeC Group IV alloys and Group III-V alloys such asGaAs, InP, and combinations thereof such as InGaAsP. The availability ofthe other materials extends the range of wavelengths for which thisdetector can be used from about 650 nm to at least about 1500 nm. Morespecifically, the above-described concepts can be used to fabricatedetectors that work for wavelengths well beyond 1500 nm. For example,one could use such concepts to fabricate detectors that operate in thewavelength region of 10 μm and beyond, i.e., the far infra-red.

It should also be understood that methods other than the one describedabove could be used to fabricate the intermediate detector region. Theabove-described method involved growing half of the layer, implantingthe deep level acceptor material, and then growing the other half of thelayer. Alternatively, one could epitaxially grow the entire intermediatelayer and then use a higher energy to implant the deep level materialfarther into that layer. Or, one could employ in-situ doping of theintermediate layer as it is being deposited by epitaxial methods or byphysical vapor deposition (PVD) or by chemical vapor deposition (CVD) orby other known deposition methods.

The deep level implants are also not limited to indium and thallium asdopants. They include any material, e.g. element, isotope, molecule orchemical complex, which produces a deep level energy state. In general,deep level energy states are those energy states that are at least about100 meV from the conduction or the valence band; whereas, shallow leveldopants are those that produce energy states that might be less thanabout 20–40 meV from the band edge. Other elements or isotopes thatproduce such deep level acceptor states might include zinc, iron, tin,and sulphur, just to name a few. Of course, the range of choices thatcan be used to fabricate these devices might be severely limited byother requirements that are placed on the device. For example, if thedevice is expected to survive subsequent thermal cycling to hightemperatures, e.g. 1000° C., then the choices are fewer because thatwill likely exclude materials having high diffusion rates and materialswhose thermal stability is not sufficient.

Indeed, the deep level energy states could be produced in ways otherthan through introducing dopants into the material. For example, onecould produce such states by creating crystallographic defects in thematerial, by creating a periodic multilayer structure, or by creatingmicrostructures in the material. It should be understood that anymechanism that produces the deep level energy states in the energy bandwould be acceptable.

In addition, two or more co-implants or co-dopants can be used with thedeep level dopant to accomplish one or more of the previously describedbeneficial objectives. For example, both carbon and arsenic can be usedin connection with indium. Or arsenic and phosphorous can be used alongwith a deep level acceptor dopant. Or more than two co-dopants can beused depending on what the desired objectives are. Indeed, as experiencein other devices shows, it is often advantageous to introduce multipleco-dopants to optimize performance.

In the described embodiment of the impurity-based detector, we focusedon one particular transition, namely, the transition of an electron fromthe filled deep level acceptor state to the conduction band. There are,however, at least two other transitions that are of potential interest.The first one is a transition of an electron from deep in the valenceband to the neutral acceptor. The second one is a transition of anelectron from the valence band to an ionized donor site. Any of thesetransitions create excess carriers that will contribute to an electricalsignal. It might be desirable to emphasize one or another of thesetransitions by manipulating the ionization level of the deep acceptorstates.

One way of manipulating this ionization level is with co-dopants, asdescribed above. Without co-doping, roughly half of the indium acceptorswill be neutral, and more than 90% of the thallium acceptors will beneutral. Another way of manipulating the ionization level of theacceptors would be using a P-N junction (in the photodiode detector). Inthis case, virtually all of the acceptors in the P-N junction depletionregion would be ionized, facilitating the acceptor-conduction bandtransitions.

An improvement is to place the impurity-based detector in an opticalresonator for the wavelength to be detected, which allows moreabsorption and photocurrent at a given or lower optical power. Forexample, a cavity can be created by using two mirrors spaced on oppositesides of the absorber with a separation that causes the light toresonate through constructive interference. These mirrors can be createdby a thin metal, a dielectric stack, or a periodic pattern along thewaveguide as in a Bragg grating. The Bragg grating has a specialadvantage in that it can be made very narrow band in wavelength, evennarrower than the resonator bandwidth. So, if light is not amplified itwill not be reflected either.

Other resonators for the detector can be made with waveguide rings inclose coupling to the serial waveguide, which would also only detectlight at the resonant wavelength and transmit light at otherwavelengths. The limitation of a resonator is that it must besufficiently stable over all temperatures and not reflect sufficientlight back down the waveguide that could cause interference with theoptical source. Both of the above-mentioned resonators could accomplishthis task with good engineering.

Finally, we note that the structure shown in FIG. 3 is connected as atwo-terminal detector. However, the ideas described herein can beembodied in devices with three or more terminals. For example, if usedin a three terminal bipolar transistor, the impurity-doped region mightbe the base region of the device.

Still other embodiments are within the following claims.

1. An optical circuit comprising: a semiconductor substrate comprisingsilicon; an optical waveguide formed in or on the substrate, saidoptical waveguide comprising a core made of a SiGe alloy; and an opticaldetector formed in or on the semiconductor substrate, said opticaldetector aligned with the optical waveguide so as to receive an opticalsignal from the optical waveguide during operation, said opticaldetector having: a first electrode; a second electrode, wherein thefirst electrode comprises a first doped semiconductor material and thesecond electrode comprises a second doped semiconductor material andwherein the first and second doped semiconductor materials are of thesame conductivity type; and an intermediate layer between the first andsecond electrodes, said intermediate layer comprising a semiconductormaterial characterized by a conduction band, a valence band that is at alower energy level than the conduction band, and deep level energystates introduced between the conduction and valence bands.
 2. Theoptical circuit of claim 1, wherein the optical detector is formed inthe waveguide.
 3. The optical circuit of claim 2, wherein the waveguideis formed in a trench in the substrate.
 4. The optical circuit of claim3, wherein the optical detector is also formed in said trench.
 5. Theoptical circuit of claim 1, wherein the first semiconductor materialcomprises a first doped silicon and the second semiconductor materialcomprises a second doped silicon.
 6. The optical circuit of claim 5,wherein the first and second doped semiconductor materials are N-type.7. The optical circuit of claim 5, wherein the first and second dopedsemiconductor materials are P-type.
 8. The optical circuit of claim 5,wherein the doping of the first and second semiconductor materialsincreases as a function of distance from the intermediate layer.
 9. Anoptical circuit comprising: a semiconductor substrate; an opticalwaveguide formed in or on the substrate; and an optical detector formedin or on the semiconductor substrate, said optical detector aligned withthe optical waveguide so as to receive an optical sianal from theoptical waveguide during operation, said optical detector having: afirst electrode; a second electrode; and an intermediate layer betweenthe first and second electrodes, said intermediate layer comprising asemiconductor material characterized by a conduction band, a valenceband that is at a lower energy level than the conduction band, and deeplevel energy states introduced between the conduction and valence bands,wherein the semiconductor material is a SiGe alloy that is doped with atleast one of indium and thallium to produce the deep level energystates.
 10. The optical circuit of claim 9, wherein the semiconductormaterial is Si_(0.95)Ge_(0.05).
 11. The optical circuit of claim 9,wherein said semiconductor material also includes a co-dopant thatfunctions to either substantially fill or substantially deplete saiddeep level energy states or improve optical activation of the deep levelenergy states.
 12. The optical circuit of claim 11, wherein theco-dopant is carbon.
 13. The optical circuit of claim 11, wherein theco-dopant is selected from the group consisting of arsenic, phosphorous,and carbon.
 14. The optical circuit of claim 1, wherein thesemiconductor material is a SiGe alloy.
 15. The optical circuit of claim14, wherein the semiconductor material is Si_(0.95)Ge_(0.05).
 16. Theoptical circuit of claim 14, wherein the semiconductor material is dopedwith at least one of indium and thallium to produce the deep levelenergy states.
 17. The optical circuit of claim 14, wherein saidsemiconductor material also includes a co-dopant that functions toeither substantially fill or substantially deplete said deep levelenergy states or improve optical activation of the deep level energystates.
 18. The optical circuit of claim 17, wherein the co-dopant iscarbon.
 19. The optical circuit of claim 17, wherein the co-dopant isselected from the group consisting of arsenic, phosphorous, and carbon.20. The optical circuit of claim 9, wherein the optical detector isformed in the waveguide.
 21. The optical circuit of claim 20, whereinthe waveguide is formed in a trench in the substrate.
 22. The opticalcircuit of claim 21, wherein the optical detector is also formed in saidtrench.
 23. The optical circuit of claim 9, wherein the substratecomprises silicon.
 24. The optical circuit of claim 23, wherein theoptical waveguide comprises a core made of a SiGe alloy.
 25. The opticalcircuit of claim 24, wherein the first electrode comprises a first dopedsemiconductor material and the second electrode comprises a second dopedsemiconductor material.
 26. The optical circuit of claim 25, wherein thefirst doped semiconductor material comprises a first doped silicon andthe second doped semiconductor material comprises a second dopedsilicon.
 27. The optical circuit of claim 26, wherein the first dopedsilicon and the second doped silicon are of opposite conductivity types.28. The optical circuit of claim 26, wherein the first doped silicon andthe second doped silicon are of the same conductivity type.
 29. Theoptical circuit of claim 25, wherein the first and second dopedsemiconductor materials are N-type.
 30. The optical circuit of claim 25,wherein the first and second doped semiconductor materials are P-type.31. The optical circuit of claim 26, wherein the doping of the first andsecond semiconductor materials increases as a function of distance fromthe intermediate layer.